Also featured are computer aids such as logic simulation and mask layout, as well as examples on simple MOS design. The text is recommended for electrical engineers who would like to know how to use MOS for integral circuit design.

... MOS 集積回路の特徴は,原理的にはエピタキシャル基板を必要とせず,また MOS 電界効果トランジスター自身が基板との間に形成される空乏層によって自己分離されるため,チップ表面上のデバイス密度を大きくすることができることで,経済性のよい ... 集積回路を.

This book will be an essential reference for engineers in semiconductor related fields and academics and postgraduates within the field of microelectronics.

With these new unabridged and inexpensive editions, Wiley hopes to extend the life of these important works by making them available to future generations of mathematicians and scientists.

"The book MOS Devices for Low-Voltage and Low-Energy Applications is a good reference for graduate students, researchers, semiconductor and electrical engineers who will design the electronic systems of tomorrow." —Dr.

Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits.

Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view.